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Effects of Sn4+ doping and oxygen vacancy on magnetic and electrical properties of yttrium iron garnet prepared by sol-gel method

  • Published:2021-03 Issue:5 Volume:47 Page:6442-6452
  • ISSN:0272-8842
  • Container-title:Ceramics International
  • language:en
  • Short-container-title:Ceramics International

Author:

Duong Nguyen Phuc,Thuy Nguyet Dao Thi,Loan To Thanh,Anh Luong Ngoc,Soontaranon Siriwat,Klysubun Wantana,Viet Nga Tran Thi

Funder

National Foundation for Science and Technology Development

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Electrical properties of yttrium iron garnet;Metselaar;Proc. Int. Sch. Phys. Enrico Fermi,1978

2. Modulation of magnon spin transport in a magnetic gate transistor;Das;Phys. Rev. B,2020

3. Doped yttrium iron garnet for thermistor-bolometers;D'Amico;Mater. Res. Bull.,1984

4. Ferrite gas sensors;Gadkari;IEEE Sensor. J.,2011

5. Realization of resistive and magnetization switching in sol-gel derived yttrium iron garnet thin films;Yao;Thin Solid Films,2020
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