Impact of oxygen partial pressure on resistive switching characteristics of PLD deposited ZnFe2O4 thin films for RRAM devices-Reference-Cited by-同舟云学术

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Impact of oxygen partial pressure on resistive switching characteristics of PLD deposited ZnFe2O4 thin films for RRAM devices

Published:2021-11 Issue: Volume: Page:
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Rajarathinam Senthilkumar,Ganguly Udayan,Venkataramani Narayanan

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference59 articles.

1. Neuromorphic nanoelectronic materials;Sangwan;Nat. Nanotechnol.,2020

2. Resistance random access memory, Mater;Chang;Today,2016

3. An overview of resistive random access memory devices;Li;Chin. Sci. Bull.,2011

4. Metal-oxide RRAM;Wong;Proc. IEEE,2012

5. Redox-based resistive switching memories – nanoionic mechanisms , prospects , and challenges;Waser;Adv. Mater.,2009

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