Retention characteristics of V-doped Bi3.25La0.75Ti3O12 thin film-Reference-Cited by-同舟云学术

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Retention characteristics of V-doped Bi3.25La0.75Ti3O12 thin film

Published:2004-01 Issue:7 Volume:30 Page:1565-1568
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Kim Jin Soo,Ahn Chang Won,Lee Hai Joon,Lee Sun Young,Kim Ill Won,Bae Jong Sung,Jeong Jung Hyun

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. J.F. Scott, Ferroelectric Memories, Springer, Berlin, 2000.

2. Ferroelectric Memories

3. Fatigue-free ferroelectric capacitors with platinum electrodes

4. Lanthanum-substituted bismuth titanate for use in non-volatile memories

5. Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the Electrical Properties of Zr-Doped Bi3.15Nd0.85Ti3O12 Thin Films by Engineering Polarization Rotation;Journal of Electronic Materials;2016-04-18

2. Multiferroic properties of Bi3.15Nd0.85Ti3O12–NiFe2O4–Bi3.15Nd0.85Ti3O12 trilayer composite thin films prepared by a sol–gel process;Journal of Sol-Gel Science and Technology;2014-11-11

3. Effects of Sputtering Conditions on Microstructure and Ferroelectric Properties of RF-Sputtered Bi_3.25La_0.75Ti₃O₁₂ Thin Films;Advanced Materials Research;2012-10

4. Microstructure and Electrical Properties of Vanadium doped Bi₄Ti₃O₁₂ Layer-Stuctured Ferroelectric Ceramics;Advanced Materials Research;2012-07

5. Preparation and characterization of dense lanthanum-doped bismuth titanate ceramics;Science China Physics, Mechanics and Astronomy;2011-12-14

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