In-situ mapping characterization of structure and electrical property of grain boundary in polycrystalline ZnO using nanorobot in SEM
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. High improvement of degradation behavior of ZnO varistors under high current surges by appropriate Sb2O3 doping;Wang;J. Eur. Ceram. Soc.,2021
2. Mesoscopic modeling of the mechanically tunable electrical conductivity of ZnO varistors;Taylor;J. Appl. Phys.,2020
3. CaO doped ZnO–Bi2O3 varistors: grain growth mechanism, structure and electrical properties;Hembram;Ceram. Int.,2021
4. Effects of intergranular capacitance and resistance dispersion on polycrystalline semiconductor impedance;Buono;Solid State Ionics,2019
5. Piezotronic effect on electrical characteristics of bulk ZnO varistors;Raidl;Adv. Eng. Mater.,2017
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ rapid nondestructive characterization of multiple irregular three-dimensional grain boundary structures and electrical properties by nanorobot with SEM in ZnO;Ceramics International;2024-08
2. Investigation of the role of yttrium sesquioxide nanoparticles on the properties of zinc oxide ceramics;Nano Express;2024-07-10
3. Nondestructive characterization of grain boundary Z‐directional lateral surface in ZnO using nanorobot combined with SEM;Journal of the American Ceramic Society;2023-05-09
4. Local Three-Dimensional Characterization of Nonlinear Grain Boundary Length within Bulk ZnO Using Nanorobot in SEM;Crystals;2022-11-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3