Al-doping driven electronic structure of α-NiS hollow spheres modified by rGO as high-rate electrode for quasi-solid-state capacitor-Reference-Cited by-同舟云学术

Al-doping driven electronic structure of α-NiS hollow spheres modified by rGO as high-rate electrode for quasi-solid-state capacitor

Published:2022-12 Issue:24 Volume:48 Page:36021-36028
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Yuan Jingjing,Lu Yuchen,Huang Bingji,Xu Hanqiao,Tao Yingrui,Xu Hui,Zhang Wenyao,He Guangyu,Chen Haiqun^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference40 articles.

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4. Effect of NiS nanosheets on the butanone sensing performance of ZnO hollow spheres under humidity conditions;Perfecto;Sensor Actuat B-Chem.,2021

5. Facile hydrothermal synthesis of NiS hollow microspheres with mesoporous shells for high-performance supercapacitors;Li;New J. Chem.,2016

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