Dielectric relaxation and resistive switching of Bi0.96Sr0.04Fe0.98Co0.02O3/CoFe2O4 thin films with different thicknesses of the Bi0.96Sr0.04Fe0.98Co0.02O3 layer-Reference-Cited by-同舟云学术

Dielectric relaxation and resistive switching of Bi0.96Sr0.04Fe0.98Co0.02O3/CoFe2O4 thin films with different thicknesses of the Bi0.96Sr0.04Fe0.98Co0.02O3 layer

Published:2019-02 Issue:3 Volume:45 Page:3522-3530
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Liu Yun,Tan Guoqiang,Chai Zhengjun,Lv Long,Yue Zhongwei,Xue Mintao,Ren Huijun,Xia Ao^ORCID

Funder

Project of the National Natural Science Foundation of China

Shaanxi Province Key Research and Development Plan

Academic Leaders Funding Scheme of Shaanxi University of Science & Technology

Graduate Innovation Fund of Shaanxi University of Science & Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

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4. Diodelike and resistive hysteresis behavior of heterolayered BiFeO3/ZnO ferroelectric thin films;Wu;J. Appl. Phys.,2010

5. Strain effect on the surface potential and nanoscale switching characteristics of multiferroic BiFeO3 thin films;Yan;Appl. Phys. Lett.,2012

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