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Anisotropic electromechanical properties of GaN ceramics caused by polarisation

  • Published:2020-03 Issue:4 Volume:46 Page:5331-5336
  • ISSN:0272-8842
  • Container-title:Ceramics International
  • language:en
  • Short-container-title:Ceramics International

Author:

Qin GuoShuai,Lu Chunsheng,Umair Muhammad,Zhao MingHao

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Electron devices on piezoelectric semiconductors: a device model;Withers;IEEE Trans. Ultrason. Ferroelectr.,1984

2. Strained layer piezoelectric semiconductor devices;Rees;Microelectron. J.,1997

3. Dielectric activity and ferroelectricity in piezoelectric semiconductor Li-doped ZnO;Akira;Jpn. J. Appl. Phys.,1996

4. Propagation of extensional waves in a piezoelectric semiconductor rod;Zhang;AIP Adv.,2016

5. Analysis of a circular piezoelectric semiconductor embedded in a piezoelectric semiconductor substrate;Yang;Arch. Appl. Mech.,2006

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