Persistent photoconductivity in Al-doped ZnO photoconductors under air, nitrogen and oxygen ambiance: Role of oxygen vacancies induced DX centers-Reference-Cited by-同舟云学术

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Persistent photoconductivity in Al-doped ZnO photoconductors under air, nitrogen and oxygen ambiance: Role of oxygen vacancies induced DX centers

Published:2019-05 Issue:7 Volume:45 Page:8561-8570
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Bhatt Vishwa,Kumar Manjeet,Kim Joondong,Chung Hak-Jun,Yun Ju-Hyung

Funder

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry and Energy

Incheon National University

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference65 articles.

1. Physics of Semiconductor Devices;Sze,2006

2. Effect of structural defects, surface roughness on sensing properties of Al doped ZnO thin films deposited by chemical spray pyrolysis technique;Kumar;Ceram. Int.,2017

3. Simultaneous synthesis of Al-doped ZnO nanoneedles and zinc aluminum hydroxides through use of a seed layer;Cho;Cryst. Growth Des.,2008

4. A comprehensive review of ZnO materials and devices;Özgür;J. Appl. Phys.,2005

5. ZnO–nanostructures, defects, and devices;Schmidt-Mende;Mater. Today,2007

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