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Formation mechanism of Si3N4 in reaction-bonded Si3N4-SiC composites

  • Published:2016-11 Issue:15 Volume:42 Page:16448-16452
  • ISSN:0272-8842
  • Container-title:Ceramics International
  • language:en
  • Short-container-title:Ceramics International

Author:

Long Menglong,Li Yong,Qin Haixia,Xue Wendong,Chen Junhong,Sun Jialin,Vasant Kumar R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Nitridation mechanism of reaction sintered Si3N4-SiC composite;Li;J. Chin. Ceram. Soc.,2011

2. Test and analysis of nitride bonded SiC sidelining materials. Typical properties analysed 1997–2007;Skybakmoen;Light Met. (TMS),2008

3. Silicon nitride and related material;Riley;J. Am. Ceram. Soc.,2000

4. Quality evaluation of nitride bonded silicon carbide materials;Skybakmoen;Light Met. (TMS),2005

5. Spent Si3N4 bonded SiC sidelining materials in aluminium electrolysis cells;Wang;Light Met. (TMS),2009

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