Phase development in Ba(Mg1/3Ta2/3)O3 via conventional and B-site precursor routes

Author:

Park Tai-Kwang,Kim Nam-Kyoung

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Ba(Mg,Ta)O3–BaSnO3 high-Q dielectric resonator;Matsumoto;Jpn. J. Appl. Phys.,1991

2. Contribution of dielectric constant to change in temperature coefficient of resonant frequency in (Ba1-xSrx) (Mg1/3Ta2/3)O3 compounds;Nagai;Jpn. J. Appl. Phys.,1992

3. Ba(Mg1/3Ta2/3)O3 ceramics with ultra-low loss at microwave frequencies;Matsumoto,1986

4. Ordering in compounds of the A(B′0.33Ta0.67)O3 type;Galasso;Inorg. Chem.,1963

5. Relaxor ferroelectrics;Uchino;J. Ceram. Soc. Jpn.,1991

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis of Ba(Mg1/3, Ta2/3)O3 by atomic-resolution scanning transmission electron microscopy;Japanese Journal of Applied Physics;2023-07-21

2. Dielectric responses of Ba(Mg1/3Ta2/3)O3 ceramics;PROCEEDINGS OF ADVANCED MATERIAL, ENGINEERING & TECHNOLOGY;2020

3. Development of structural ordering in (Ba 0.8 Pb 0.2 )(Mg 1/3 Ta 2/3 )O 3 perovskite;Ceramics International;2016-01

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