Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor

Author:

Awadhiya Bhaskar,Ratnakumar Rahul,Kumar SampathORCID,Yadav Sameer,Nigam Kaushal,Nanjappa YashwanthORCID,Kondekar P.N.

Publisher

Elsevier BV

Reference27 articles.

1. An investigation of linearity performance and intermodulation distortion of GME CGTMOSFET for RFIC designs;Ghosh;IEEE Trans. Electron. Dev.,2012

2. Design and characterization of a microwave feedforward amplifier with improved wide-band distortion cancellation;Hau;IEEE Trans. Microw. Theor. Tech.,2001

3. A 9.2 mW, 4–8 GHz resistive feedback CMOS LNA with 24.4 dB Gain, 2 dB noise Figure, and 21.5 dBm output IP3;Perumana,2008

4. A common-gate amplifier with transconductance nonlinearity cancellation and its high-frequency analysis using the volterra series;Kim;IEEE Trans. Microw. Theor. Tech.,2009

5. Linearity analysis of CMOS for RF application;Kang;IEEE Trans. Microw. Theor. Tech.,2003

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