High efficiency wide gap Cu(In,Ga)Se2 solar cells: Influence of buffer layer characteristics

Author:

Cheng ShiqingORCID

Funder

Shanxi Datong University

Publisher

Elsevier BV

Reference31 articles.

1. Wide gap chalcopyrites: material properties and solar cells;Siebentritt;Thin Solid Films,2002

2. Evidence for a modified-stannite crystal structure in wide band gap Cu-poor CuIn1−xGaxSe2: impact on the optical properties;Souilah;Appl. Phys. Lett.,2008

3. Crystal structure re-investigation in wide band gap CIGSe compounds;Souilah;Thin Solid Films,2009

4. High-concentration silver alloying and steep back-contact gallium grading enabling copper indium gallium selenide solar cell with 23.6% efficiency;Keller,2024

5. Review on the developments in copper indium gallium diselenide (CIGSe)-based thin film photovoltaic devices;Adhikari;J. Mater. Sci. Mater. Electron.,2024

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