A boundary determined Auger recombination model for semiconductor power diodes-Reference-Cited by-同舟云学术

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A boundary determined Auger recombination model for semiconductor power diodes

Published:1987 Issue: Volume:8 Page:279-282
ISSN:0270-0255
Container-title:Mathematical Modelling
language:en
Short-container-title:Mathematical Modelling

Author:

Henderson I.A.,McGhee J.

Publisher

Elsevier BV

Subject

General Mathematics

Reference5 articles.

1. Recombination in the End Regions of PIN Diodes;Berz;Solid-state Electronics,1979

2. On the Current-Voltage Characteristics of n+-p-p+Diodes;Chuang;IEEE Trans.,1983

3. High Injection Phenomena in p+in+ Solar Cells;Luque;Solid-State Electronics,1982

4. The Influence of Auger Recombination on the Forward Characteristics of Semiconductor Power Rectifiers at High Current Densities;Nilsson;Solid-State Electronics,1973

5. Spatial Composition and Injection Dependence of Recombination in Silicon Power Structures;Schlangenotto;IEEE Trans.,1979

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