The existence of 3-fold coordinated phosphorus in heavily doped a-Si:H
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference8 articles.
1. Infrared and far-infrared absorption of B- and P-doped amorphous Si
2. Structural and vibrational properties of amorphous phosphorus
3. Vibrational spectra and structure of trisilylphosphine and trisilylphospine-d9
4. Characterization of Silicon Nitride Films
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic and optical properties of n-type a-Si:H;Journal of Non-Crystalline Solids;1993-12
2. Doping Efficiency of N-Type a-Si:H Doped with a Liquid Organic Source;MRS Proceedings;1993-01-01
3. The Effects of Coordination and Local Disorder on Impurity States in Hydrogenated Amorphous Silicon;MRS Proceedings;1987
4. A self‐consistent analysis of temperature‐dependent field‐effect measurements in hydrogenated amorphous silicon thin‐film transistors;Journal of Applied Physics;1986-07-15
5. Incorporation of phosphorus and boron in amorphous silicon measured with (p, γ) resonant reactions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1986-04
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