Using silicon dioxide as device engineering parameter in the fabrication of photovoltaic cells through masked ion implantation-Reference-Cited by-同舟云学术

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Using silicon dioxide as device engineering parameter in the fabrication of photovoltaic cells through masked ion implantation

Published:1986-10 Issue:2 Volume:14 Page:95-105
ISSN:0165-1633
Container-title:Solar Energy Materials
language:en
Short-container-title:Solar Energy Materials

Author:

Silard Andrei P

Publisher

Elsevier BV

Subject

General Engineering

Reference29 articles.

1. Characteristics of an all-implanted p+−n−n+ solar cell;Silard;IEEE Electron Dev. Lett.,1984

2. Correlation between the electro-optical and technological parameters in BSF-type silicon solar cells fabricated through masked ion-implantation;Silard,1984

3. A current-generating BSF silicon solar cell fabricated through masked ion implantation;Silard;IEEE Electron Dev. Lett.,1983

4. The spectral response of BSF silicon solar cells fabricated through masked ion implantation;Silard;IEEE Electron Dev. Lett.,1983

5. Performance of n+−p−p+ silicon solar cells fabricated through masked ion implantation;Silard;Solar Cells,1985

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Developmental experiments on large‐area silicon solar cells;Journal of Applied Physics;1989-05

2. Operation of the silicon colour filtering element;Sensors and Actuators;1989-01

3. Bifacial, large-area silicon sensors for radiative energy signals;Sensors and Actuators;1988-11

4. Design/technological experiments on low cost, BSF-type, bifacial solar cells fabricated on large-area silicon wafers;Solar Energy Materials;1988-02

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