Growth and properties of CuInNS2 epitaxial layers obtained by chemical vapour transport-Reference-Cited by-同舟云学术

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Growth and properties of CuInNS2 epitaxial layers obtained by chemical vapour transport

Published:1980-12 Issue:1 Volume:4 Page:67-79
ISSN:0165-1633
Container-title:Solar Energy Materials
language:en
Short-container-title:Solar Energy Materials

Author:

Hwang H.L.,Tseng B.H.,Sun C.Y.,Loferski J.J.

Publisher

Elsevier BV

Subject

General Engineering

Reference27 articles.

1. Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications;Shay,1976

2. The Chemistry of Diamond-like Semiconductors;Goryunova,1965

3. Solid State Chemistry;Kasper,1972

4. Electrical Properties, Optical Properties, and Band Structure of CuGaS2and CuInS2

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of CuInS2Thin Film Formation by a Low-Temperature Chemical Deposition Method;ACS Applied Materials & Interfaces;2011-12-21

2. Growth and properties of CuInS2 thin films;Bulletin of Materials Science;1998-08

3. Structural and galvanomagnetic properties of CuInS2 films;Applied Physics A Materials Science and Processing;1996-02

4. Structural, optical and electrical properties of spray pyrolytically deposited thin films of CuInS2;Bulletin of Materials Science;1993-06

5. Structural and optical properties of sprayed CuInS2 thin films;Materials Chemistry and Physics;1993-04

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