Preparation and properties of Au-(n)AlxGa1−xAs-(n)GaAs Schottky barrier solar cells-Reference-Cited by-同舟云学术

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Preparation and properties of Au-(n)AlxGa1−xAs-(n)GaAs Schottky barrier solar cells

Published:1979-09 Issue:1 Volume:2 Page:31-43
ISSN:0165-1633
Container-title:Solar Energy Materials
language:en
Short-container-title:Solar Energy Materials

Author:

Shen Y.D,Pearson G.L

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. n-n Semiconductor heterojunctions

2. Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe

3. Refractive Index of AlAs

4. Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and Ge

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots;Thin Solid Films;2016-04

2. The effect of dislocations on the open-circuit voltage of gallium arsenide solar cells;IEEE Transactions on Electron Devices;1990

3. Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights;Journal of Applied Physics;1987-06

4. Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions;Metal-Semiconductor Schottky Barrier Junctions and Their Applications;1984

5. HETEROJUNCTION AND HETEROFACE STRUCTURE CELLS;Fundamentals of Solar Cells;1983

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