Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential-Reference-Cited by-同舟云学术

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Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential

Published:1982-11 Issue:1-3 Volume:8 Page:205-214
ISSN:0165-1633
Container-title:Solar Energy Materials
language:en
Short-container-title:Solar Energy Materials

Author:

Chen Kun-ji,Fritzsche H.

Publisher

Elsevier BV

Subject

General Engineering

Reference27 articles.

1. Electronic properties of substitutionally doped amorphous Si and Ge

2. Electrical and optical properties of amorphous Si:F:H alloys

3. Recent developments in amorphous silicon solar cells

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ infrared ellipsometry study of the hydrogen incorporation in p-doped amorphous silicon and p-i interfaces;Journal of Non-Crystalline Solids;1993-12

2. Energy distribution of Ar ions at the substrate in the sputtering deposition of A-Si: H films;Journal of Non-Crystalline Solids;1993-07

3. Structural and electronic properties of glow-discharge-deposited a-Ge:H films as a function of the substrate potential;Solar Energy Materials;1991-07

4. Doping dependence of the low-temperature photoconductivity in hydrogenated amorphous silicon;Philosophical Magazine Letters;1991-02

5. Characterization of intrinsic and doped amorphous silicon through thermal hydrogen effusion;Solar Energy Materials;1988-04

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