MOVPE growth of GaAs/GaAlAs structures on GaAs and Ge substrates for solar cell devices-Reference-Cited by-同舟云学术

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MOVPE growth of GaAs/GaAlAs structures on GaAs and Ge substrates for solar cell devices

Published:1991-12 Issue:2-4 Volume:23 Page:356-362
ISSN:0165-1633
Container-title:Solar Energy Materials
language:en
Short-container-title:Solar Energy Materials

Author:

Flores C.,Bollani B.,Campesato R.,Paletta F.,Passoni D.,Timò G.,Tosoni A.

Publisher

Elsevier BV

Subject

General Engineering

Reference6 articles.

1. Proc. 5th European Symp. on Photovoltaic Generators in Space;Matsuda,1986

2. Proc. 20th IEEE Photovoltaic Specialists Conf.;Yeh,1988

3. Proc. 20th IEEE Photovoltaic Specialists Conf.;Okamoto,1988

4. Proc. 17th Symp. on GaAs and Related Compounds;Flores,1990

5. Proc. 20th IEEE Photovoltaic Specialists Conf.;Tobin,1988

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new model of heterostructure GaAs/Ge IMPATT diode at W-band frequency;AIP Conference Proceedings;2017

2. Temperature dependence of photocurrent components on enhanced performance GaAs/AlGaAs multiple quantum well solar cells;Solar Energy Materials and Solar Cells;2001-12

3. Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy;Materials Research Bulletin;2000-01

4. Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

5. Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates;Materials Science and Engineering: B;1998-08

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