Modeling and control of microelectronics materials processing

Author:

Badgwell T.A.,Breedijk T.,Bushman S.G.,Butler S.W.,Chatterjee S.,Edgar T.F.,Toprac A.J.,Trachtenberg I.

Publisher

Elsevier BV

Subject

Computer Science Applications,General Chemical Engineering

Reference238 articles.

1. The plasma etching of polysilicon with CF3Cl/Ar discharges: parametric modeling and impedance analysis;Allen;J. Electrochem. Soc.,1986

2. The plasma etching of polysilicon with CF3Cl/Ar discharges: Modeling of ion bombardment energy distributions;Allen;J. Electrochem. Soc.,1986

3. The plasma etching of polysilicon with CF3C1/Ar discharges: Modeling of etching rate and directionality;Allen;J. Electrochem. Soc.,1986

4. Modelling, optimization, and control of the selective plasma etching of silicon and silicon dioxide;Allred,1991

5. Etch tailoring through flexible end-point detection;Angell;SPIE Vo. 1392, 543 Advanced Techniques for Integrated Circuit Processing,1990

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