Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs-Reference-Cited by-同舟云学术

Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs

Published:1996-11 Issue:1-2 Volume:37 Page:13-17
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Niu Meng-Nian,Ding Xin-Fang,Tong Qin-Yi

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference10 articles.

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2. Site-binding model of the electrical double layer at the oxide/water interface;Yates;J. Chem. Soc. Faraday Trans. 1,1974

3. Methods of ISFET fabrication;Matsuo;Sensors and Actuators,1981

4. Ion-sensing devices with silicon nitride and borosilicate glass insulators;Harame;IEEE Trans. Electron Devices,1987

5. Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface;Bousse;IEEE Trans. Electron Devices,1983

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