Influence of oxygen concentration in the carrier gas on the response of tin dioxide sensor under hydrogen and methane

Author:

Tournier Guy,Pijolat Christophe

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. A new approach to selective detection of gas by an SnO2 solid-state sensor;Lalauze;Sensors and Actuators,1984

2. Influence of microstructure on electrical properties of SnO2 films prepared by C.V.D.;Bruno;Advances in Science and Technology,1995

3. P. Breuil et al., Method of manufacturing a gas detection sensor, and the resulting sensor, United States patent no. 4, 988, 1991, 539.

4. A study of tin-dioxide gas-sensor thermochemistry under conditions of varying oxygen partial pressure;Williams;Sensors and Actuators B,1995

5. The effect of oxygen partial pressure on the response of tin (IV) oxide based gas sensors;Coles;J. Phys. D: Appl. Phys.,1991

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