Long-term drift mechanism of Ta2O5 gate pH-ISFETs-Reference-Cited by-同舟云学术

Long-term drift mechanism of Ta2O5 gate pH-ISFETs

Published:2000-06 Issue:1-3 Volume:64 Page:152-155
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Ito Yoshitaka

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Stability of ISFET and its new measurement protocol;Ito,1998

2. Fabrication of planar ISFET with PN junctions;Ito,1985

3. Sensing properties of planar ISFET;Ito,1986

4. The pH-sensing properties of tantalum pentoxide films fabricated by metal organic chemical vapor deposition;Mikolajick;Sens. Actuators, B,1997

5. UV-O3 and dry-O2: two-step annealed chemical vapor deposited Ta2O5-films for storage dielectrics of 64-Mb DRAMs;Shinriki;IEEE Trans. Electron Devices,1991

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