Electronic properties tailoring of th-XN (X = B, al) by surface functionalization-Reference-Cited by-同舟云学术

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Electronic properties tailoring of th-XN (X = B, al) by surface functionalization

Published:2024-08 Issue: Volume:16 Page:100240
ISSN:2666-8459
Container-title:Results in Surfaces and Interfaces
language:en
Short-container-title:Results in Surfaces and Interfaces

Author:

Zhu Yajie,Yang Ying^ORCID,Zhu Na,Wang Chen,Peng Xihao,Lin Tao^ORCID,He Li

Publisher

Elsevier BV

Reference39 articles.

1. Aluminum Nitride (AIN);Adachi,1999

2. Defects in hexagonal-AlN sheets by first-principles calculations;Almeida;Eur. Phys. J. B,2012

3. 2D boron nitride incorporating homonuclear boron bonds: stabilized in neutral, anionic and cationic charge;Anota;SN Appl. Sci.,2022

4. Chemical trends in the work function of modified Si (111) surfaces: a DFT study;Arefi;J. Phys. Chem. C,2014

5. 2D III‐nitride materials: properties, growth, and applications;Ben;Adv. Mater.,2021

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