Photoluminescence study of silicon solar cells irradiated with large fluence electrons or protons-Reference-Cited by-同舟云学术

Photoluminescence study of silicon solar cells irradiated with large fluence electrons or protons

Published:1998-01 Issue:1 Volume:53 Page:25-30
ISSN:0969-806X
Container-title:Radiation Physics and Chemistry
language:en
Short-container-title:Radiation Physics and Chemistry

Author:

Hisamatsu Tadashi,Kawasaki Osamu,Matsuda Sumio,Tsukamoto Kazuyoshi

Publisher

Elsevier BV

Subject

Radiation

Reference16 articles.

1. Carter, R.J., 1964. Study of energy levels in high energy proton damaged silicon. IEEE Trans. Nucl. Sci. NS-11, 290–295

2. Effect of electron energy on defect introduction in silicon;Carter;J. Phys. Chem. Solids.,1966

3. The optical properties of luminescence centres in silicon;Davis;Phys. Rep.,1989

4. Recombination luminescence from ion implanted silicon;Kirkpatrick;Radiat. Eff.,1976

5. Kitahara, H., Tanaka, S., Kanamori, Y., Itoh, T. (1995) Engineering Test Satellite VI's experiment results. 46th International Astronautical Congress, Oct. 2–6, Oslo, Norway

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