Ways of providing radiation resistance of magnetic field semiconductor sensors-Reference-Cited by-同舟云学术

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Ways of providing radiation resistance of magnetic field semiconductor sensors

Published:2001-06 Issue:3-6 Volume:61 Page:743-745
ISSN:0969-806X
Container-title:Radiation Physics and Chemistry
language:en
Short-container-title:Radiation Physics and Chemistry

Author:

Bolshakova I.A.,Krukovskii S.,Holyaka R.,Matkovskii A.,Moroz A.

Publisher

Elsevier BV

Subject

Radiation

Reference5 articles.

1. Local neutrality conception;Brudnyi;Physica B,1995

2. Deep trapping centers in n-type GaAs bombarded with fast neutrons;Brudnyi;Semiconductors,1993

3. EL2-related studies in irradiated and implanted GaAs;Guillot;Rev. Phys. Appl.,1988

4. Influence of fast-neutron irradiation on the properties of gallium arsenide doped with various impurities;Jarmoluk;Semiconductors,1980

5. Rare-earth elements in III–V semiconductors;Masterov;Semiconductors,1990

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation stability of visible and near-infrared optical and magneto-optical properties of terbium gallium garnet crystals;Applied Optics;2015-03-27

2. Direct Hall measurements of InSb thin films during their irradiation with fast neutrons;Sensors and Actuators A: Physical;2006-05

3. Semiconductor sensor materials stable under conditions of hard ionizing radiation;Sensors and Actuators A: Physical;2003-09

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