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Swift heavy ion radiation damage on high resistivity silicon

  • Published:1998-02 Issue:3 Volume:61 Page:464-469
  • ISSN:0920-5632
  • Container-title:Nuclear Physics B - Proceedings Supplements
  • language:en
  • Short-container-title:Nuclear Physics B - Proceedings Supplements

Author:

Mangiagalli P.,Levalois M.,Marie P.,Rancoita P.G.,Rattaggi M.

Publisher

Elsevier BV

Subject

Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Reference15 articles.

1. Defect evolution in irradiated silicon detector material;Hall;Nucl. Instr. Meth.,1996

2. P.G.Rancoita M. Rattaggi G. Rossi A. Seidman R. Dahan, N. Croitoru. Subm to Nucl. Instrum. Methods Phys. Res. B.

3. Electrical conduction at low temperature…;Rattaggi;Nucl. Instr. Meth. Phys. Res. A,1995

4. Dlts measurements of energetic levels…;Furetta;Nucl. Instr. Meth. Phys. Res. A,1995

5. Comparison of defects produced by…;Padgavkar;J. Appl. Phys.,1991

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1. IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing;Optoelectronics, Instrumentation and Data Processing;2022-12

2. Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions;Semiconductors;2019-11

3. Particle interaction and displacement damage in silicon devices operated in radiation environments;Reports on Progress in Physics;2007-03-08

4. Effect of high electronic energy deposition in semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-08

5. Defect creation kinetics in swift heavy ions, protons and electrons irradiated germanium;The European Physical Journal Applied Physics;2001-02
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