Electrical properties of a Ba1−xKxBiO3/Nb-doped SrTiO3 Schottky junction-Reference-Cited by-同舟云学术

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Electrical properties of a Ba1−xKxBiO3/Nb-doped SrTiO3 Schottky junction

Published:1997-08 Issue: Volume:282-287 Page:2501-2502
ISSN:0921-4534
Container-title:Physica C: Superconductivity and its Applications
language:en
Short-container-title:Physica C: Superconductivity and its Applications

Author:

Suzuki Seiji,Yamamoto Tetsuya,Suzuki Hiroshi,Kawaguchi Kenichi,Takahashi Kazuhiko,Yoshisato Yorinobu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Quantum Mechanical Transmission and Reflection of Quasi-Particles at Arbitrary Potential Barriers in the Superconducting Base Transistor

2. Preparation and Characteristics of a Superconducting Base Transistor with an Au/Ba1-xKxBiO3/Niobium-Doped SrTiO3Structure

3. S.Suzuki et al., submitted to J.Appl.Phys.

4. Property Control for High-Quality Ba1-xKxBiO3Epitaxial Thin Films Prepared by High-Pressure Reactive rf-Magnetron Sputtering

5. Forward current-voltage characteristics of Schottky barriers on n-type silicon

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