Studies on the proton irradiation induced defects on Ni/n-GaAs Schottky barrier diodes
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Ion implantation in GaAs
2. Generation of the EL2 defect in n-GaAs irradiated by high energy protons
3. A study of annealing effects on deep level profile distributions in GaAs by capacitive methods
4. J.J. Yang, C.H. Chu, L.J. Chen, Ion Beam Modification of Materials, North-Holland, Amsterdam, 1994, p. 783.
5. Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs
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