Zeeman spectroscopy of shallow nitrogen donor in 3C-SiC
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Y.S. Park, SiC Materials and Devices, Semiconductors and Semimetals, Vol. 52, Academic Press, New York, 1998.
2. Growth and Properties of β‐SiC Single Crystals
3. Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates
4. Magneto-optical effects on shallow donor states in 6H-SiC in high magnetic fields
5. Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide
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2. Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range;Physical Review B;2011-02-23
3. silicon carbide (SiC), optical properties of impurities and other defects: shallow donors;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
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