Do we know the energy levels of radiation defects in silicon?
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Radiation hardness of silicon detectors – a challenge from high-energy physics
2. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
3. Observation of rapid direct charge transfer between deep defects in silicon
4. Bistable interstitial-carbon–substitutional-carbon pair in silicon
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1. Investigation of double barrier MOS tunnel diodes with PECVD silicon quantum well;Microelectronics Reliability;2011-07
2. Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays;Acta Physica Polonica A;2007-07
3. Particle interaction and displacement damage in silicon devices operated in radiation environments;Reports on Progress in Physics;2007-03-08
4. Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays;Acta Physica Polonica A;2006-02
5. Influence of deep levels on space charge density at different temperatures in γ-irradiated silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2004-09
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