First-principles studies of Ti impurities in SiC-Reference-Cited by-同舟云学术

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First-principles studies of Ti impurities in SiC

Published:2001-12 Issue: Volume:308-310 Page:726-729
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Barbosa K.O.,Machado W.V.M.,Assali L.V.C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Polymorphism and Polytypism in Crystals;Verma,1966

2. H. Baumhauer, Z. Kristallogr. 50 (1912) 33.

3. Polytypic transformations in silicon carbide

4. S.T.G. Muller, D. Hoffman, A. Winnacker, E.N. Mokhov, Yu.A. Vodakov, in: S. Nakashima, H. Matsunami, S. Yoshida (Eds.), Silicon Carbide and Related Materials, 1995.

5. Possible lifetime‐limiting defect in 6H SiC

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