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Identification of getter defects in high-energy self-implanted silicon at Rp/2

  • Published:2001-12 Issue: Volume:308-310 Page:442-445
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Krause-Rehberg R.,Börner F.,Redmann F.,Gebauer J.,Kögler R.,Kliemann R.,Skorupa W.,Egger W.,Kögel G.,Triftshäuser W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor;IEEE Journal of the Electron Devices Society;2018

2. Defect identification in semiconductors with positron annihilation: Experiment and theory;Reviews of Modern Physics;2013-11-14

3. Xe-implanted zirconium oxycarbide studied by variable energy positron beam;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-12

4. Positron depth profiling in solid surface layers;Annales de chimie Science des Matériaux;2007-08-23

5. Excess vacancies in high energy ion implanted SiGe;Journal of Applied Physics;2007-02
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