Author:
Näser A.,Gehlhoff W.,Overhof H.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. The cadmium levels in silicon
2. Th. Wichert, N. Achtziger, H. Metzner, R. Sielemann, in: G. Langouche (Ed.), Hyperfine Interactions of Defects in Semiconductors, Elsevier, Amsterdam, 1992, p. 77.
3. Transition metals in silicon
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