Defect investigations in plastically deformed gallium arsenide-Reference-Cited by-同舟云学术

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Defect investigations in plastically deformed gallium arsenide

Published:1999-12 Issue: Volume:273-274 Page:710-713
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Leipner H.S,Hübner C.G,Grau P,Krause-Rehberg R

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Dynamical recovery, dislocation mobility, and diffusion in undoped semiconductors

2. The Activation Energy of Dislocation Movement

3. Connection between the Schoeck and the Haasen analysis of thermally activated dislocation glide in semiconductors

4. G. Schöck, in: F.R.N. Nabarro (Ed.), Dislocations in Solids, Vol. 3, North-Holland, Amsterdam, 1980, pp. 63–163.

5. Thermal Activation of Plastic Deformation of Undoped GaAs between 528 and 813 K

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plastic deformation of III–V semiconductorsunder concentrated load;Progress in Crystal Growth and Characterization of Materials;2003-01

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