EPR proof of the negatively charged acceptor state Zn− in silicon
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Diffusion and Electrical Behavior of Zinc in Silicon
2. Double-Acceptor Behavior of Zinc in Silicon
3. The electrical properties of zinc in silicon
4. Infrared spectroscopy of the neutral zinc double-acceptor in silicon
5. Bound-to-bound transitions at neutral zinc in silicon: Effective-mass-like states and hole-hole interaction
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
2. Ab initio modeling of Be–H and Zn–H complexes in Si;Physica B: Condensed Matter;2003-12
3. Substitutional Zn in SiGe: Deep-level transient spectroscopy and electron density calculations;Physical Review B;2003-07-16
4. Silicon, paramagnetic centers: principal values of g-tensors of cubic centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements
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