An infrared investigation of the 887 cm−1 band in Cz–Si
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
2. New Oxygen Infrared Bands in Annealed Irradiated Silicon
3. Absorption of oxygen in silicon in the near and the far infrared
4. A Positron Lifetime Study of Defects in Neutron-Irradiated Si
5. One- and Two-Oxygen Defects in Silicon - A Theoretical Study
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical studies of defects generated in neutron-irradiated Cz-Si during HP-HT treatment;Crystal Research and Technology;2005-04
2. FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon;Acta Physica Sinica;2005
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