Native point defect analysis in non-stoichiometric GaAs: an annealing study-Reference-Cited by-同舟云学术

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Native point defect analysis in non-stoichiometric GaAs: an annealing study

Published:1999-12 Issue: Volume:273-274 Page:722-724
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Lutz R.C,Specht P,Zhao R,Lam O.H,Börner F,Gebauer J,Krause-Rehberg R,Weber E.R

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures

2. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

3. Tem Study of the Structure of Mbe GaAs Layers Grown at Low Temperature

4. Thermal stability of low-temperature-grown GaAs

5. Anomalies in MODFET's with a low-temperature buffer

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1. Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates;Advanced Materials Research;2013-09

2. Photonics studies on dilute nitrides at long wavelength for telecommunication;Optoelectronic Materials and Devices II;2007-11-19

3. Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing;Journal of Crystal Growth;2005-05

4. Optimization of Ga(In)NAs thin film growth by atomic hydrogen-assisted molecular beam epitaxy;MRS Proceedings;2005

5. Magnetic susceptibilities of diluted magnetic semiconductors and anomalous Hall-voltage noise;Physical Review B;2004-03-09

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