Determination of electron temperature and energy relaxation of 2DEG in AlGaAs/GaAs HEMT channel
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Hot electrons in low-dimensional structures
2. Low temperature two-dimensional mobility of a GaAs heterolayer
3. Hot electrons in a GaAs heterolayer at low temperature
4. Hot-electron energy relaxation in GaAs/GaAlAs two-dimensional structures: importance of two-phonon processes
5. Phonon emission by warm electrons in GaAs quantum wells: the effect of well width on the acoustic-optic crossover
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence study of the nitrogen content effect on GaAs/GaAs1−xNx/GaAs/AlGaAs: (Si) quantum well;Materials Science and Engineering: C;2008-07
2. Low-temperature electron mobility in a strictly 2D layer;Physica E: Low-dimensional Systems and Nanostructures;2006-06
3. Electric field dependence of drift velocity and electron temperature of GaAs/AlGaAs 2DEG in the low electric field region;Physica B: Condensed Matter;2004-05
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