Author:
Heron R.J.,Lewis R.A.,Clark R.G.,Starrett R.P.,Kane B.E.,Facer G.R.,Lumpkin N.E.,Rickel D.G.,Pfeiffer L.N.,West K.W.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated
2. R.A. Lewis, R.J. Heron, R.G. Clark, R.P. Starrett, A.V. Skougarevsky, in: G. Landwehr, W. Ossau (Eds.), High Magnetic Fields in the Physics of Semiconductors II, World Scientific, Singapore, 1997, pp. 1017–1020
3. Model FIRL 100; Edinburgh Instruments, Riccarton, Currie, Edinburgh EH14 4AP, UK
4. Australian national pulsed magnet laboratory for condensed matter physics research
5. Observation of oscillatory linewidth in the cyclotron resonance of GaAsAlxGa1−xAs heterostructures
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