Far-infrared laser photoconductivity of n-GaAs multiple quantum wells in a pulsed magnetic field-Reference-Cited by-同舟云学术

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Far-infrared laser photoconductivity of n-GaAs multiple quantum wells in a pulsed magnetic field

Published:1998-05 Issue: Volume:246-247 Page:290-293
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Heron R.J.,Lewis R.A.,Skougarevsky A.V.,Starrett R.P.,Clark R.G.,Henini M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Effects of confinement on shallow donors and acceptors in GaAs/AlGaAs quantum wells

2. Binding of Shallow Donor Impurities in Quantum-Well Structures

3. Confinement effects on Be acceptors in multi quantum well structures

4. Excited-state spectroscopy of confined shallow donor impurities in a multi-quantum well

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Terahertz response of CdTe/Cd 1-xMg xTe modulation-doped multiple quantum wells;Opto-Electronics Review;2024-01-03

2. Photoconductive Antennas for Terahertz Applications;Photoconductivity and Photoconductive Materials;2022-06-17

3. Terahertz magneto-photoconductive characterization of hydrogenic barrier donors in GaAs/AlGaAs epitaxial thin films;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

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