High magnetic field studies of quantum transport and cyclotron resonance on 2D gas in GaN/GaAlN heterojunction-Reference-Cited by-同舟云学术

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High magnetic field studies of quantum transport and cyclotron resonance on 2D gas in GaN/GaAlN heterojunction

Published:1998-05 Issue: Volume:246-247 Page:274-277
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Contreras S.,Goiran M.,Knap W.,Yang F.,Rakoto H.,Barbaste R.,Robert J.L.,Leotin J.,Askenazy S.,Chen Q.,Asif Khan M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

2. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition

3. Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

4. Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs;physica status solidi (c);2011-03-31

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