Impact of confined LO-phonons on the Hall effect in doped semiconductor superlattices-Reference-Cited by-同舟云学术

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Impact of confined LO-phonons on the Hall effect in doped semiconductor superlattices

Published:2016-06 Issue:2 Volume:1 Page:209-213
ISSN:2468-2179
Container-title:Journal of Science: Advanced Materials and Devices
language:en
Short-container-title:Journal of Science: Advanced Materials and Devices

Author:

Bau Nguyen Quang,Long Do Tuan

Funder

National Foundation for Science and Technology Development of Vietnam

Vietnam International Education Development

Publisher

Elsevier BV

Subject

Materials Science (miscellaneous),Biomaterials,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Confined LO phonons in GaAs/AlAs superlattices;Mowbray;Phys. Rev. B,1991

2. Electron-confined LO phonon scattering rates in GaAs/AlAs quantum wells in the presence of a quantizing magnetic field;Bhat;Semicond. Sci. Technol.,1993

3. The influences of confined phonons on the nonlinear absorption coefficient of a strong electromagnetic wave by confined electrons in doping superlattices;Bau;Prog. Electromagn. Res. Lett.,2010

4. Carrier capture processes in semiconductor superlattices due to emission of confined phonons;Paula;J. Appl. Phys.,1995

5. Resonant quasiconfined optical phonons in semiconductor superlattices;Fasolino;Phys. Rev. B,1989

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