Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
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2. Difference in etching between Si(111) and (001) surfaces induced by atomic hydrogen irradiation observed by noncontact atomic force microscopy;Japanese Journal of Applied Physics;2015-07-24
3. Reactions of surface hydrogen on amorphous carbon films with hydrogen plasma;Japanese Journal of Applied Physics;2013-12-18
4. Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C;Journal of Materials Research;2013-04-24
5. Instantaneous cleaning of silicon substrates by mesoplasma for high-rate and low-temperature epitaxy;Thin Solid Films;2009-12
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