Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—a critical review-Reference-Cited by-同舟云学术

Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—a critical review

Published:1998-12 Issue:4 Volume:51 Page:741-745
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Kuo Yue

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference13 articles.

1. For various TFT applications, readers can refer to Thin Film Transistor Technologies I, II, and III, published by Electrochem. Soc., Pennington, NJ, PV 92–24, 94–35, and 96–23, 1992, 1994, and 1996

2. Bias‐stress‐induced creation and removal of dangling‐bond states in amorphous silicon thin‐film transistors

3. Etch mechanism in the low refractive index silicon nitride plasma‐enhanced chemical vapor deposition process

4. High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiNx/a-Si Interface

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