Deposition of large area amorphous silicon films by ECR plasma CVD
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference10 articles.
1. Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
2. Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method
3. DC Bias Method for a-Si:H Deposition on a Dielectric Substrate Using Electron Cyclotron Resonance Plasma
4. Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
5. Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
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1. The Dependence of ECR-CVD Processing Parameters on Deposition Uniformity of Hydrogenated Amorphous Silicon (a-Si:H) Films;Key Engineering Materials;2015-07
2. Investigation of Electron Cyclotron Resonance Chemical Vapor Deposition Process for a-Si:H Deposition, Film Characterization and In Situ Plasma Diagnostics;ECS Journal of Solid State Science and Technology;2015
3. Comparative and integrative study of Langmuir probe and optical emission spectroscopy in a variable magnetic field electron cyclotron resonance chemical vapor deposition process used for depositing hydrogenated amorphous silicon thin films;Thin Solid Films;2014-11
4. Measurement of Temperature in Sonoplasma;Japanese Journal of Applied Physics;2004-05-28
5. Sonoplasma generated by a combination of ultrasonic waves and microwave irradiation;Applied Physics Letters;2003-12
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