Low energy Cs+ and Cl− ion implantation into Si — SIMS investigations-Reference-Cited by-同舟云学术

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Low energy Cs+ and Cl− ion implantation into Si — SIMS investigations

Published:2001-08 Issue:4 Volume:63 Page:743-748
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Hereć J,Sielanko J,Filiks J,Sowa M

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference10 articles.

1. Secondary ion mass spectrometry;Benninghoven,1987

2. Analysis of microelectronic materials and devices;Grosserbauer,1991

3. SIMS XI Proceedings;Hagenhoff,1998

4. Enhanced SIMS analysis performance by CCl4 flooding technique

5. Cesium-induced transient effects on the Si+ and Si− secondary ion emissions from Si and SiO2

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the understanding of positive and negative ionization processes during ToF-SIMS depth profiling by co-sputtering with cesium and xenon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-02

2. Determination of ion dose and profiles in74Ge and120Sn implanted silicon layers by PIXE, NAA, RBS and SIMS;Journal of Radioanalytical and Nuclear Chemistry;2004

3. Atomic Spectrometry Update. Atomic mass spectrometry;Journal of Analytical Atomic Spectrometry;2002-07-11

4. Current Awareness;Journal of Mass Spectrometry;2002

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