Ordering in GaInP: epitaxy, basic characteristics and device relevance
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering
Reference12 articles.
1. Low-pressure metalorganic vapor phase epitaxial growth of GaNGaInN heterostructures;Scholz;Sol. State Electron.,1997
2. Observation of the 2D-3D growth mode transition in the InAsGaAs system;Geiger;J. Crystal Growth,1997
3. Bis-Phosphino-Methane: a new precursor for metalorganic vapor phase epitaxy of phosphides;Geiger;J. Crystal Growth,1996
4. Fabrication and operation of first order GaInPAlGaInP DFB lasers at room temperature;Gauggel;Electron. Lett.,1995
5. Realization of optically pumped second-order GaInN-distributed-feedback lasers;Hofmann;Appl. Phys. Lett.,1996
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of the valence band offset of MOVPE-grownIn0.48Ga0.52P∕GaAsmultiple quantum wells by admittance spectroscopy;Physical Review B;2008-03-14
2. MOVPE growth and study of InP-based materials: opportunities and challenges;Materials Chemistry and Physics;2000-10
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