1. Emitter-collector shorts in bipolar devices;Barson;IEEE J. Solid-State Circuits,1976
2. Defect engineering: germanium doped silicon misfit dislocation gettering and strain layer superlattice structures via conventional CVD epitaxy;Bean,1988
3. Oxygen-related defects in Cz silicon after annealing at 635 °C;Bergholz,1986
4. Oxygen precipitation and MOS leakage after a process heat simulation;Beyer;J. Electrochem. Soc.,1987
5. Generalized guide for MOSFET miniaturization;Brews;IEEE Electron Device Lett.,1980