Multiscale modeling of chemical mechanical planarization (CMP)-Reference-Cited by-同舟云学术

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Multiscale modeling of chemical mechanical planarization (CMP)

Published:2016 Issue: Volume: Page:137-167
ISSN:
Container-title:Advances in Chemical Mechanical Planarization (CMP)
language:
Short-container-title:

Author:

Fan W.,Boning D.

Publisher

Elsevier

Reference34 articles.

1. Method for CMP Using Pad in a Bottle;Borucki,2011

2. Wear-contact problems and modeling of chemical mechanical polishing;Chekina;J. Electrochem. Soc.,1998

3. A new planarization technique using a combination of RIE and chemical mechanical polishing (CMP). Washington, D.C., USA;Davari,1989

4. Full copper wiring in a Sub-0.25um CMOS ULSI Technology. Washington D.C., USA;Edelstein,1997

5. The future of CMP. Boston, MA, USA;Evans;MRS Bulletin,2002

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching Technologies and Chemical–Mechanical Polishing;Integrated Circuit Fabrication;2023-11-16

2. Improving 300Mm Si Wafer Planarization Process with a Wholistic Approach;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

3. Effects of Process to Material Removal in CMP: Modelling and Experiments;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

4. Two Data Driven CMP Modeling Methods for DFM;2023 International Symposium of Electronics Design Automation (ISEDA);2023-05-08

5. Integrated Wafer and Die Level Simulation of Back End of Line Chemical Mechanical Polishing Processes;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

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